The Discrete IGBT Market is expected to grow from US$1.923 billion in 2025 to US$2.247 billion in 2030, at a CAGR of 3.17%.
A three-terminal power semiconductor device known as an insulated gate bipolar transistor (IGBT) is used as an electronic switch to provide fast switching with excellent precision. It's also utilized in high-powered applications such as light ballasts, variable-speed freezers, trains, electric automobiles, air conditioners, and arc welding equipment. It is also regarded as a minority carrier device, allowing for quick switching rates and more efficiency.
An insulated gate bipolar transistor is a discrete semiconductor with a bipolar junction transistor (BJT) output and a MOSFET (metal oxide semiconductor field-effect transistor) input. It improves energy savings by facilitating power control in various industries, such as industrial facilities, consumer devices, and electric vehicles. It is a monolithic mix of a MOSFET and a BJT. As a result, the device is appropriate for applications that require high current and large voltage outputs.
It improves switching speed and avoids power outages in renewable energy and electric cars. The construction of an IGBT ensures a positive temperature coefficient, which increases device longevity and reduces power consumption in high-power applications.
The increasing number of product launches by companies will boost market demand in the long run. For instance, in November 2020, for the first time in Korea, KEC launched the Gate Driver IC and IGBT solution coupled with Bootstrap Diode. For Gate Driver ICs, key domestic home appliance manufacturers have adopted certain foreign-made semiconductors. KEC, on the other hand, offered a solution that met the specifications for a new fridge model of a prominent domestic home appliance firm that even top overseas semiconductor companies could not fulfill. KEC demonstrated the BSD built-in gate driver IC's quality and features and provided an external TSD (Thermal Shut Down) circuit and an acceptable IGBT without NTC (Negative Temperature Coefficient of Resistance).
Bourns stated that their new trench-gate, ground-technology IGBTs would provide market-leading efficiency, consistent supply, and shorter lead times. Bourns revealed its new BID collection of five high-efficiency 600 and 650 V discrete IGBTs. Bourns created the new devices, which are co-packaged using fast recovery diodes (FRD), utilizing sophisticated trench-gate, field-stop technology, which allows for improved control of dynamic characteristics, according to the company.
Due to the high adoption of electric vehicles and the increasing automotive industry, the market for discrete IGBT is anticipated to rise. Therefore, several products in the market are highly used by the automotive industry, generating market sales. For instance, the AIKQ200N75CP2 automobile IGBT discrete is offered by Infineon Technologies AG, a German semiconductor manufacturer. It is an EDT2 IGBT with a co-packed diode in a TO247PLUS package. By permitting battery voltages up to 470V and safe, quick switching due to enhanced overvoltage margins, the 750V EDT technology increases energy efficiency and cooling requirements for high-voltage vehicle industries. As a result, high-performance inverter systems are possible. The parameter distribution of the EDT2 technology is exceedingly tight, and the thermal coefficient is positive. This allows for simple paralleling operation, increasing system flexibility and energy flexibility. The AIKQ200N75CP2 is a best-in-class discrete IGBT in a TO247PLUS package, with a nominal current of 200 A. This feature minimizes the chance of paralleled devices needed to achieve a specific power class, boosting power density and lowering total system costs.
The market in this region is expected to grow due to aging power transmission infrastructure and considerable expenditures in renewable energy generation. Furthermore, the increasing adoption of EVs and HEVs in these regions and government initiatives are projected to fuel market expansion. For instance, FAME India was established to promote the growth and growing adoption of electric and hybrid vehicles in the country. The FAME-II plan, with a budget of US$ 1.3 billion, was introduced in India to support 1 million e-two-wheelers, 0.5 million e-three-wheelers, 55,000 e-passenger vehicles, and 7,000 e-buses.
Discrete IGBT Market Segmentation by Power Rating
The market is analyzed by power rating into the following:
Discrete IGBT Market Segmentation by End-User
The report analyzes the market by end-user as below:
Discrete IGBT Market Segmentation by Regions:
The study also analyzed the discrete IGBT market into the following regions, with country-level forecasts and analysis as below:
The discrete IGBT market features key players such as Infineon Technologies AG, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., Toshiba Electronic Devices & Storage Corporation, Semiconductor Components Industries, LLC, and STMicroelectronics N.V., among others.
This report provides extensive coverage as explained in the points below:
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| Report Metric | Details |
|---|---|
| Study Period | 2021 to 2031 |
| Historical Data | 2021 to 2024 |
| Base Year | 2025 |
| Forecast Period | 2026 – 2031 |
| Report Metric | Details |
| Discrete IGBT Market Size in 2025 | US$1.923 billion |
| Discrete IGBT Market Size in 2030 | US$2.247 billion |
| Growth Rate | CAGR of 3.17% |
| Study Period | 2020 to 2030 |
| Historical Data | 2020 to 2023 |
| Base Year | 2024 |
| Forecast Period | 2025 – 2030 |
| Forecast Unit (Value) | USD Billion |
| Segmentation |
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| Geographical Segmentation | North America, South America, Europe, Middle East and Africa, Asia Pacific |
| List of Major Companies in Discrete IGBT Market |
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| Customization Scope | Free report customization with purchase |