5G RF Gallium Nitride (GaN) Market Size, Share, Opportunities, And Trends By Technology (GaN-Si, GaN-SiC), By Frequency (Upto 7 GHz, mmWave), And By Geography - Forecasts From 2024 To 2029

The 5G RF gallium nitride market was estimated at US$87.348 million in 2022.

GROWTH DRIVERS

• High performance and efficiency

Gallium nitride (GaN) is a semiconductor material characterized by its wide bandgap and rigid hexagonal crystal structure. The broader bandgap of gallium nitride is crucial as it determines a material's capacity to withstand electric fields. GaN's wide bandgap facilitates the creation of semiconductors featuring extremely short or narrow depletion regions, resulting in device structures with remarkably high carrier density. The reduced size of transistors and shorter current paths achieved through this allow for ultra-low resistance and capacitance, leading to speeds that can be up to 100 times faster. In essence, GaN technology surpasses conventional silicon by handling larger electric fields within a significantly smaller form factor, resulting in significantly faster switching. Moreover, GaN technologies exhibit the capability to operate at higher maximum temperatures compared to their silicon-based counterparts.

For instance:

• On June 6, 2023, NXP Semiconductors N.V., headquartered in Eindhoven, The Netherlands, introduced a line of RF amplifier modules that utilize a packaging innovation to facilitate thinner and lighter radios for 5G infrastructure. This novel approach allows for the creation of smaller base stations, making installation more convenient and cost-effective while ensuring a more discreet integration into the surroundings. The GaN multi-chip module series from NXP, coupled with the industry's inaugural top-side cooling solution for RF power, contributes to reducing both the thickness and weight of the radio by over 20%. This advancement not only enhances the efficiency of 5G base stations but also reduces the carbon footprint associated with their manufacturing and deployment.
• On December 1, 2021, Microchip Technology Inc. revealed a notable enhancement to its portfolio of Gallium Nitride (GaN) Radio Frequency (RF) power devices. This expansion includes new Monolithic Microwave Integrated Circuits (MMICs) and discrete transistors that cater to frequencies up to 20 gigahertz (GHz). These devices offer a combination of high power-added efficiency (PAE) and high linearity, introducing elevated levels of performance in a variety of applications, spanning from 5G to electronic warfare, satellite communications, commercial and defence radar systems, and test equipment.

Positive Environmental Impact

Navitas Semiconductor had projected that a global upgrade from silicon (Si) to Gallium Nitride (GaN) in data centers would result in a reduction of energy loss by 30-40%. This would equate to saving more than 100 terawatt-hours (TWhr) and 125 million tons of CO2 emissions by the year 2030. The deployment of GaN thus represented a further stride towards achieving carbon 'Net-Zero' objectives for the data center industry. Gallium Nitride (GaN) emerged as the preferred technology in scenarios where high-frequency performance played a crucial role. This included applications like base stations for 5G and 6G, as well as radar and high-frequency power conversion applications, such as adapters, microinverters, and power supplies. The competition between GaN and SiC had just begun, and while the outcome remained uncertain, examining its application by application and market by market suggested positive implications for the Earth's environment. This technological shift promised to avoid countless billions of tons of greenhouse gases in the years ahead, contributing to a cycle of replacement and rejuvenation that continued to progress inexorably.

• In May 2022, Navitas Semiconductor, a leading industry player in GaN power ICs, made history by becoming the first semiconductor company worldwide to attain CarbonNeutral®-company certification. This recognition was granted by Natural Capital Partners, esteemed experts in carbon neutrality and climate finance. The achievement of CarbonNeutral-company certification marked a significant milestone in Navitas' pursuit of its mission to "Electrify Our World" and support its customers in reaching their sustainability objectives.
• In September 2023, a team of researchers at the Indian Institute of Science (IISc) successfully created a wholly indigenous gallium nitride (GaN) power switch. This switch has the potential for use in various systems, including power converters for electric vehicles and laptops, as well as applications in wireless communications. The entire process, spanning from material growth to device fabrication to packaging, was accomplished in-house at the Centre for Nano Science and Engineering (CeNSE), IISc.
• On November 23, 2023, INVT Power released a report verifying that AC-DC converters employing gallium nitride power components could attain an efficiency of 96% or even higher, resulting in a potential reduction of power loss by up to 50%. When extrapolated based on the average power consumption of data centers, this translates to saving 37 billion kilowatt-hours of electricity. This amount is sufficient to meet the power requirements of 40 ultra-large-scale data centers for a year.
• On May 7, 2021, Navitas Semiconductor, the leading figure in Gallium Nitride (GaN) Power ICs, went public through a Live Oak II SPAC Business Combination at an enterprise value of $1.04 billion. They highlighted that the robust bond formed by Gallium combined with Nitrogen exhibits electric fields 10 times stronger and electron mobility 2 times greater. This attribute of Gallium Nitride results in substantial advantages for power electronics, making them up to three times smaller, lighter, more densely packed, faster charging, offering up to 40% energy savings, and ultimately leading to lower system costs. These substantial improvements have the potential to revolutionize the field of power electronics.

FAVOURABLE GOVERNMENT REGULATIONS

India accomplished its short-term and long-term objectives outlined in the Panchamrit action plan. This includes achieving a non-fossil fuel energy capacity of 500 gigawatts by 2030, meeting at least 50% of its energy needs through renewable sources by 2030, reducing CO2 emissions by 1 billion tons by 2030, lowering carbon intensity to below 45% by 2030, and laying the groundwork for attaining a Net-Zero emission target by 2070, as mentioned on 28th September 2023.

In December 2021, researchers in India successfully created a high-performance industry-standard model for Aluminum Gallium Nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs). The model features straightforward design procedures, making it applicable for the production of high-power Radio Frequency (RF) circuits due to its elevated breakdown voltage. These RF circuits, including amplifiers and switches, are crucial for wireless transmission and find utility in space and defence applications. The AlGaN/GaN HEMTs can also enhance the power level of solid-state microwave circuits by a factor of five to ten, leading to a notable reduction in overall chip size and cost. Consequently, the developed standard holds the potential to significantly decrease the development cost of circuits and devices used for transmitting high-frequency signals.

In March 2022, Rajeev Chandrasekhar, the Union Minister of State for Electronics & Information Technology and Skill Development & Entrepreneurship, toured the Gallium Nitride Ecosystem Enabling Centre and Incubator (GEECI) facility located at the esteemed Indian Institute of Sciences (IISc) in Bengaluru. This facility, a collaborative effort between the Ministry of Electronics and Information Technology and IISc Bengaluru, is focused on establishing a GaN-based Development Line Foundry facility. Its primary emphasis is on RF and power applications, including strategic applications.

EMERGING OPPORTUNITIES IN THE 5G GALLIUM NITRIDE (GaN) MARKET

• RF GaN-on-Silicon

In May 2022, STMicroelectronics and MACOM achieved technological and performance milestones with prototypes of RF Gallium-Nitride-on-Silicon. This technology, RF GaN-on-Silicon, holds great promise for 5G and 6G infrastructure. The traditional RF power technology, laterally-diffused metal-oxide-semiconductor (LDMOS), was dominant in early-generation RF power amplifiers (PAs). GaN presents superior RF characteristics and notably higher output power compared to LDMOS in these RF PAs. Additionally, GaN can be manufactured on either silicon or silicon-carbide (SiC) wafers. RF GaN-on-SiC may incur higher costs due to competition for SiC wafers from high-power applications and its non-mainstream semiconductor processing.

GEOGRAPHICAL PRESENCE

Europe is expected to show growth in this market. In December 2022, NexGen introduced the inaugural GaN-on-GaN power semiconductor technology, branded as Vertical GaN™ by the California-based company. Simultaneously, in March 2023, SweGaN, a Swedish firm, unveiled intentions to establish a high-volume production facility for gallium nitride on silicon carbide (GaN-on-SiC) wafers at the Innovative Materials Arena (IMA), a technological hub in Linköping, to address the rising demand. Subsequently, in October 2023, GaN Systems joined forces with Infineon. The company, headquartered in Ottawa, contributes an extensive array of gallium nitride (GaN)-based power conversion solutions and expertise in cutting-edge applications to Infineon's portfolio.

A report by CSIS, published on 18 July 2023, shows that China dominates Gallium production. China's influence over gallium supply chains developed indirectly, mainly because gallium is predominantly obtained as a byproduct of bauxite processing, the primary ore used for aluminum production. Consequently, gallium production is closely linked to the dynamics of the global aluminum market. China witnessed a tenfold surge in aluminum production, soaring from 4.2 million tons to 40.2 million tons, between 2000 and 2022. Presently, China is responsible for around 59 percent of the world's aluminum supply, enabling it to establish a significant share in global gallium production. This dominant position was further solidified by intentional government policies, where Beijing mandated its rapidly growing aluminum manufacturers to incorporate the capability to extract gallium. From 2005 to 2015 alone, China's output of low-purity gallium skyrocketed from 22 metric tons to 444 metric tons.

MAJOR PLAYERS IN THE MARKET

5G RF Gallium Nitride (GaN) Market Scope:

SEGMENTATION

The 5G RF Gallium Nitride (GaN) market has been analyzed through the following segments:

• By Technology
  • GaN-Si
  • GaN-SiC
• By Frequency
  • Upto 7 GHz
  • mmWave
• By Geography
  • Americas
    • USA
    • Others
  • EMEA
    • Germany
    • UK
    • Others
  • APAC
    • China
    • Japan
    • South Korea
    • Others

1. INTRODUCTION

1.1. Market Overview

1.2. Market Definition

1.3. Market Segmentation

2. RESEARCH METHODOLOGY  

2.1. Research Data

2.2. Assumptions

3. EXECUTIVE SUMMARY

3.1. Research Highlights

4. MARKET DYNAMICS

4.1. Market Drivers

4.2. Market Restraints

4.3. Bandwidth Availability

4.4. Number of Users

5. GOVERNMENT REGULATIONS/POLICIES

6. 5G RF GALLIUM NITRIDE (GAN) MARKET BY TECHNOLOGY 

6.1. Introduction

6.2. GaN-Si

6.3. GaN-SiC

7. 5G RF GALLIUM NITRIDE (GAN) MARKET BY FREQUENCY

7.1. Introduction

7.2. Upto 7 GHz

7.3. mmWave

8. 5G RF GALLIUM NITRIDE (GAN) MARKET BY GEOGRAPHY

8.1. Introduction

8.2. Americas

8.2.1. United States

8.2.2. Others

8.3. Europe, Middle East and Africa

8.3.1. Germany

8.3.2. UK

8.3.3. Others

8.4. Asia Pacific

8.4.1. China

8.4.2. Japan

8.4.3. South Korea

8.4.4. Others

9. RECENT DEVELOPMENT AND INVESTMENTS

10. COMPETITIVE ENVIRONMENT AND ANALYSIS

10.1. Major Players and Strategy Analysis

10.2. Vendor Competitiveness Matrix

11. COMPANY PROFILES

11.1. SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

11.2. WOLFSPEED, INC.

11.3. Qorvo, Inc

11.4. NXP Semiconductors

11.5. Finwave Semiconductor, Inc.

SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

WOLFSPEED, INC.

Qorvo, Inc

NXP Semiconductors

Finwave Semiconductor, Inc.